| Mechanism | Typical spectral range | Physical determinants | Key feature |
|---|---|---|---|
| Photoluminescence Fluorescence Phosphorescence | UV 200–400 nm; Vis 400–700 nm; NIR 700–1100 nm | Bandgap, defect states, thermal quenching; quantum yield/lifetime | Broad spectral engineering via materials/dopants |
| Chemiluminescence Bioluminescence | Vis 430–600 nm; NIR 650–900 nm (probes) | ΔG of reaction, excitation pathways, energy transfer | “Cold” light; kinetic/thermochemical control |
| Triboluminescence Mechanoluminescence | Vis 400–700 nm; sometimes NIR | Charge separation upon fracture, micro‑discharge, host PL | Spectrum close to host fluorescence |
| Radioluminescence Scintillation | UV–Vis–NIR 200–900 nm | LET, transfer to luminescent centers; non‑linearity (Birks’ law) | Birks ∝ yield vs dE/dx (band set by host/dopant) |
| Thermoluminescence | Vis ~350–650 nm | Thermal release (E, s), kinetic (order 1/2) | “Glow” curves vs T (dosimetry/archaeology) |
| Plasma discharge LTE non‑LTE |
Planck continuum (Wien λmax≈2.9×10−3/T) Lines/bands UV–IR, VUV possible |
Temperature, composition, pressure, opacity; equilibrium vs non‑LTE | Continuum (opaque) or atomic/ionic emission lines |
| Sonoluminescence | Vis–near-UV, peak ~300–500 nm (T≈4–10 kK) | Adiabatic compression of a bubble, gas/opacity, stability window | Quasi-thermal flash, micrometric, ultra-fast |
| Electroluminescence LED/OLED EL panel | UV → NIR, by bandgap (≈315–950+ nm) | Radiative e−/hole recombination; material (InGaN, GaAsP, organics…) | Color set by Eg (E=hc/λ); narrowband, efficient |
| Ranges are typical, not absolute; spectrum can shift with material or condition engineering. | |||